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ICSCRM 2019 |
Closed
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| International Conference on Silicon Carbide and Related Materials |
| Dates:
Sunday, September 29, 2019 - Friday, October 4, 2019
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| Venue: ICC Kyoto,
Kyoto,
Japan |
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The ICSCRM is the premier forum for technical discussion in all areas of silicon carbide (SiC) and other wide bandgap (WBG) semiconductors. The topics covered in the ICSCRM include bulk and epitaxial growth, fundamental physical properties, defect characterization and engineering, quantum technology, surfaces and interfaces, device fabrication processes, devices (high-power, high-temperature, RF power, radiation-resistant devices, etc.), packaging, modular and circuit technologies, and system applications for SiC and related materials including other WBG semiconductors such as III-nitrides, oxides, and diamond.
The ICSCRM brings together world-leading scientists, distinguished experts, experienced engineers, and young students working in various areas of WBG semiconductors from all over the world. The objective of the ICSCRM is to report and discuss both scientific and technological advances in the fields described above. One of the most important topics addressed is the substantial improvement of electric energy efficiency by using WBG semiconductor power devices for preserving the natural environment and preventing global warming. The ICSCRM also offers the opportunity of a Technical Exhibition for companies and agencies that provide materials, devices, equipment, other technologies and information relevant to the research and development efforts in the present areas.
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Website: http://www.icscrm2019.org/
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| Previous Dates: | | | ICSCRM 2017 | 9/17/2017 - 9/22/2017 | Washington DC, United States | |
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